Datasheet

VS-15MQ040-M3
www.vishay.com
Vishay Semiconductors
Revision: 20-Jan-15
2
Document Number: 93366
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Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1.5 A
T
J
= 25 °C
0.43
V
2 A 0.49
1.5 A
T
J
= 125 °C
0.34
2 A 0.43
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 20
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.26 V
Forward slope resistance r
t
64.6 m
Typical junction capacitance C
T
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz 134 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage 
temperature range
T
J
(1)
, T
Stg
-40 to +150 °C
Maximum thermal resistance, 
junction to ambient
R
thJA
DC operation 80 °C/W
Approximate weight
0.07 g
0.002 oz.
Marking device Case style SMA (similar D-64) XF
dP
tot
dT
J
-------------
1
R
thJA
--------------<