Datasheet

VS-20ETF..PbF Series, VS-20ETF..-M3 Series
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Vishay Semiconductors
Revision: 26-Oct-11
2
Document Number: 94098
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.31 V
Forward slope resistance r
t
T
J
= 150 °C
11.88 m
Threshold voltage V
F(TO)
0.93 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 20 Apk
25 A/μs
25 °C
400 ns
Reverse recovery current I
rr
6.1 A
Reverse recovery charge Q
rr
1.7 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.9
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC
20ETF08
20ETF10
20ETF12
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
t
a
t
b