Datasheet

VS-20ETF..PbF Series, VS-20ETF..-M3 Series
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Vishay Semiconductors
Revision: 26-Oct-11
3
Document Number: 94098
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
5
100
10 25
120
130
110
15
20
140
Conduction angle
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
30°
60°
90°
120°
180°
Ø
150
025
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
15
530
110
35
120
100
10 20
130
140
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
DC
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
25
25
30
20
10 155
5
15
Conduction angle
20ETF.. Series
T
J
= 150 °C
RMS limit
180°
120°
90°
60°
30°
Ø
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
25
25
15
10 205
15
5
20
30
RMS limit
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
180°
120°
90°
60°
30°
350
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20ETF.. Series
300
150
50
0.01 0.1 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
400
20ETF.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied