Datasheet

VS-HFA32PA120CPbF, VS-HFA32PA120C-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
1
Document Number: 94073
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 16 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA32PA120C... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A per leg continuous
current, the VS-HFA32PA120C... is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
®
product
line features extremely low values of peak recovery current
(I
RRM
) and does not exhibit any tendency to “snap-off”
during the t
b
portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA32PA120C... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 16 A
V
R
1200 V
V
F
at I
F
3.0 V
t
rr
typ. 30 ns
T
J
max. 150 °C
Diode variation Single die
TO-247AC
1
2
3
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current
per leg
I
F
T
C
= 100 °C
16
A
per device 32
Single pulse forward current I
FSM
190
Maximum repetitive forward current I
FRM
64
Maximum power dissipation P
D
T
C
= 25 °C 151
°C
T
C
= 100 °C 60
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 W