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VSMB1940X01

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 30-Jun-16

Document Number: 81933

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Speed Infrared Emitting Diode, 940 nm,

GaAlAs Double Hetero

DESCRIPTION

VSMB1940X01 is an infrared, 940 nm emitting diode in

GaAlAs Double Hetero technology with high radiant power

and high speed, molded in clear, untinted 0805 plastic

package for surface mounting (SMD).

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• AEC-Q101 qualified

• Peak wavelength: λ

= 940 nm

• High reliability

• High radiant power

• High radiant intensity

• High speed

• Angle of half sensitivity: ϕ = ± 60°

• Low forward voltage

• Suitable for high pulse current operation

• 0805 standard surface-mountable package

• Floor life: 168 h, MSL 3, according to J-STD-020

• Lead (Pb)-free reflow soldering

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• High speed IR data transmission

• High power emitter for low space applications

• High performance transmissive or reflective sensors

Note

• Test conditions see table “Basic Characteristics“

Note

• MOQ: minimum order quantity

21531

PRODUCT SUMMARY

COMPONENT I

(mW/sr) ϕ (deg) λ

(nm) t

(ns)

VSMB1940X01 6 ± 60 940 15

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMB1940X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

100 mA

Peak forward current t

/T = 0.5, t

= 100 μs I

200 mA

Surge forward current t

= 100 μs I

FSM

Power dissipation P

160 mW

Junction temperature T

100 °C

Operating temperature range T

amb

-40 to +85 °C

Storage temperature range T

stg

-40 to +100 °C

Soldering temperature According to Fig. 9, J-STD-020 T

260 °C

Thermal resistance junction / ambient JESD 51 R

thJA

270 K/W

Summary of content (7 pages)

PAGE 1
VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). • • • • • • • • • • • • • • • • Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.
PAGE 2
VSMB1940X01 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 270 K/W 80 60 40 100 80 60 RthJA = 270 K/W 40 20 20 0 0 10 21532 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 0 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 Tamb - Ambient Temperature (°C) 21533 Fig. 2 - Forward Current Limit vs.
PAGE 3
VSMB1940X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 180 Ie rel - Relative Radiant Intensity (%) 100 10 tp = 100 µs tp/T= 0.001 IF = 1 mA 160 140 120 IF = 100 mA 100 80 60 tp = 20 ms 1 40 0 1 2 3 VF - Forward Voltage (V) 21534 - 60 - 40 - 20 Fig. 3 - Forward Current vs.
PAGE 4
VSMB1940X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: 200 max. 30 s 150 Moisture sensitivity: level 3 max. 100 s max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
PAGE 5
VSMB1940X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 21501 Rev. 1.5, 30-Jun-16 Document Number: 81933 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 6
VSMB1940X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 Rev. 1.5, 30-Jun-16 technical drawings according to DIN specifications Document Number: 81933 6 For technical questions, contact: emittertechsupport@vishay.
PAGE 7
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