Datasheet

VSMB1940X01
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 30-Jun-16
2
Document Number: 81933
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
21532
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
R
thJA
= 270 K/W
21533
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
0
20
40
60
80
100
120
020406080100
R
thJA
= 270 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.15 1.35 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
-2.2- V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
--1.5-mV/K
I
F
= 100 mA TK
VF
--1.1-mV/K
Reverse current V
R
= 5 V I
R
- - 10 μA
Junction capacitance
V
R
= 0 V, f = 1 MHz,
E = 0 mW/cm
2
C
J
-70-pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
3612mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
-60-mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φe-40-mW
Temperature coefficient of radiant
power
I
F
= 1 mA TKφ
e
- -1.1 - %/K
I
F
= 100 mA TKφ
e
- -0.51 - %/K
Angle of half intensity ϕ -± 60- deg
Peak wavelength I
F
= 30 mA λ
p
- 940 - nm
Spectral bandwidth I
F
= 30 mA Δλ -25-nm
Temperature coefficient of λ
p
I
F
= 30 mA TK
λp
-0.25- nm
Rise time I
F
= 100 mA, 20 % to 80 % t
r
-15-ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
-15-ns
Virtual source diameter d - 0.5 - mm