Datasheet
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 23-Aug-11
2
Document Number: 81930
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.15 1.35 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
2.2 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
I
F
= 100 mA TK
VF
- 1.1 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
70 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
20 40 60 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
330 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
40 mW
Temperature coefficient of radiant
power
I
F
= 1 mA TK
e
- 1.1 %/K
I
F
= 100 mA TK
e
- 0.51 %/K
Angle of half intensity ± 12 deg
Peak wavelength I
F
= 30 mA
p
920 940 960 nm
Spectral bandwidth I
F
= 30 mA 25 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
15 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
15 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
23 MHz
Virtual source diameter d 1.5 mm