Datasheet
VSMY2853SL
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 28-Mar-13
2
Document Number: 83481
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature acc. figure 7, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21890
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21891
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.65 1.9 V
I
F
= 1 A, t
p
= 100 μs V
F
2.9 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.45 mV/K
I
F
= 10 mA TK
VF
- 1.3 mV/K
Reverse current I
R
not designed for reverse operation μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
20 35 50 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
300 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
55 mW
Temperature coefficient of radiant
power
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity ± 28 deg
Peak wavelength I
F
= 100 mA
p
840 850 870 nm
Spectral bandwidth I
F
= 30 mA 30 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
10 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
10 ns