Datasheet

VSMY2940RG, VSMY2940G
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 08-Dec-17
2
Document Number: 84221
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
180 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature According to Fig. 10, J-STD-020 T
sd
260 °C
Thermal resistance junction-to-ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 20406080100
P
V
-Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
R
thJA
= 250 K/W
0
20
40
60
80
100
0 20406080100
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
R
thJA
= 250 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
-1.41.8V
I
F
= 1 A, t
p
= 100 μs V
F
-2.5- V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
--0.7-mV/K
Reverse current I
R
Not designed for reverse operation μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
-55-pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
75 145 215 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
- 1000 - mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
-55-mW
Temperature coefficient of radiant
power
I
F
= 100 mA TKφ
e
--0.2-%/K
Angle of half intensity ϕ -± 10-deg
Peak wavelength I
F
= 100 mA λ
p
920 940 960 nm
Spectral bandwidth I
F
= 100 mA Δλ -50-nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
-0.25-nm/K
Rise time I
F
= 100 mA, 10 % to 90 % t
r
-10-ns
Fall time I
F
= 100 mA, 10 % to 90 % t
f
-10-ns