IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.
BT151-500R SCR, 12 A, 15mA, 500 V, SOT78 Rev. 05 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability High thermal cycling performance High surge current capability 1.3 Applications Ignition circuits Protection Circuits Motor control Static switching 1.4 Quick reference data Table 1.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode 3 G gate mb mb anode Simplified outline mb Graphic symbol A K G sym037 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 500 V VRRM repetitive peak reverse voltage - 500 V IT(AV) average on-state current half sine wave; Tmb ≤ 109 °C; see Figure 3 - 7.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 003aab830 15 Ptot (W) a = 1.57 1.9 2.2 10 2.8 4 5 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α 0 0 2 4 6 8 IT(AV) (A) Fig 3. Total power dissipation as a function of average on-state current; maximum values 001aaa956 103 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 10−2 tp (s) Fig 4.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 003aab829 160 ITSM (A) 120 80 IT ITSM 40 t tp Tj initial = 25 °C max 0 Fig 5. 102 10 1 103 number of cycles Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from see Figure 6 junction to mounting base - - 1.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; Tj = 25 °C; IT = 100 mA; see Figure 8 - 2 15 mA IL latching current VD = 12 V; Tj = 25 °C; see Figure 9 - 10 40 mA IH holding current VD = 12 V; Tj = 25 °C; see Figure 10 - 7 20 mA VT on-state voltage IT = 23 A; Tj = 25 °C; see Figure 11 - 1.4 1.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 001aaa951 3 IL IL(25°C) IH IH(25°C) 2 2 1 1 0 −50 Fig 9. 0 50 100 150 Tj (°C) Normalized latching current as a function of junction temperature 001aaa959 30 001aaa950 3 0 −50 0 50 100 150 Tj (°C) Fig 10. Normalized holding current as a function of junction temperature 001aaa953 1.6 VGT VGT(25°C) IT (A) 1.2 20 (1) (2) (3) 0.8 10 0 0 0.5 1 1.5 2 VT (V) 0.4 −50 0 50 100 150 Tj (°C) Fig 12.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BT151-500R_5 20090302 Product data sheet - BT151_SER_L_R_4 Modifications: • • Package outline updated. Type number BT151-500R separated from data sheet BT151_SER_L_R_4.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
BT151-500R NXP Semiconductors SCR, 12 A, 15mA, 500 V, SOT78 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . .