Data Sheet

BT152-800R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 9 June 2011 2 of 12
NXP Semiconductors
BT152-800R
SCR
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOT78 (TO-220AB)
2 A anode
3 G gate
mb A mounting base; connected to anode
12
mb
3
sym037
AK
G
Table 3. Ordering information
Type number Package
Name Description Version
BT152-800R TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
V
RRM
repetitive peak reverse voltage - 800 V
I
T(AV)
average on-state current half sine wave; T
mb
≤ 103 °C; see Figure 3 -13A
I
T(RMS)
RMS on-state current half sine wave; see Figure 1; see Figure 2 -20A
I
TSM
non-repetitive peak on-state
current
half sine wave; T
j(init)
=25°C; t
p
= 10 ms;
see Figure 4; see Figure 5
- 200 A
half sine wave; T
j(init)
=25°C; t
p
= 8.3 ms - 220 A
I
2
t I
2
t for fusing t
p
= 10 ms; sine-wave pulse - 200 A
2
s
dI
T
/dt rate of rise of on-state current I
T
=50A; I
G
= 200 mA; dI
G
/dt = 200 mA/µs - 200 A/µs
I
GM
peak gate current - 5 A
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 20 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C