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SGPT5053C

SHENZHEN SHUGUAN ELECTRONIC TECHNOLOGY CO.,LTD. V1.0 2011.03.18

Note: 1. All dimensions are in millimeters

2. Tolerances unless dimensions ± 0.25mm

1.Emitter

2.Collector

Technical Data Sheet

5mm Phototransistor: SGPT5053C

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Features

Fast response time

High photo sensitivity

Pb free

The product itself will remain within RoHS

compliant version.

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Descriptions

SGPT5053C is a high speed and high sensitive NPN

silicon epitaxial planar phototransistor molded in a

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flat lens plastic package. Due to its water clear epoxy

the device is sensitive to visible and infrared radiation.

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Applications

Infrared applied system

Security system

Camera

Optoelectronic switch

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Package Dimensions

Summary of content (4 pages)

PAGE 1
www.szsgir.com SGPT5053C Technical Data Sheet 5mm Phototransistor: SGPT5053C Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Descriptions SGPT5053C is a high speed and high sensitive NPN silicon epitaxial planar phototransistor molded in a 5 flat lens plastic package. Due to its water clear epoxy the device is sensitive to visible and infrared radiation.
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www.szsgir.com 2 SGPT5053C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Rating Units Collector-Emitter Voltage VCEO 30 V Emitter-Collector-Voltage VECO 5 V IC 20 mA Pc 75 mW Lead Soldering Temperature Tsol 260 Operating Temperature Topr -40 ~ +85 Storage Temperature Tstg -40 ~ +85 Collector Current Power Dissipation at (or below) 25 Free Air Temperature Electro-Optical Characteristics (Ta=25 ) Parameter Symbol Rang of Spectral Bandwidth λ0.
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www.szsgir.com SGPT5053C 3 Typical Electro-Optical Characteristics Curves 100 80 60 40 20 0 -40 -20 Fig.2 Spectral Sensitivity Relative Spectral Sensitivity(%) Collector Power Dissipation (mW) Fig.1 Collector Power Dissipation vs. Ambient Temperature 0 20 40 60 1市市 Ta=25° 数市 6市 4市 2市市 80 100 1市市技市市 3市市 Ambient Temperature Ta(°C) 7市市有市市 11市市 13市市 Wavelength(nm) Fig.3 Relativ Collector Current vs. Ambient Temperature Fig.4 Collector Current vs.
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www.szsgir.com Fig.5 Collector Dark Current vs. Ambient Temperature Fig.6 Collector Current vs. Collector-Emitter Voltage 3.5 1市市市 Vce=2市V 3.0 Collector Current Ic (mA) Collector Dark Current ICEO (nA) SGPT5053C 1市市 1市 1 2.5 2.0 Ee=1.5mW/cm 2 Ee=1.25mW/cm2 1.5 Ee=1.0mW/cm2 Ee=0.75mW/cm2 1.0 Ee=0.5mW/cm 2 0.5 0 市子1 2技市技市 7技 Ambient Temperature (°C) 1市市 0 1 2 3 4 Collector-Emitter Voltage VCE (V) Packing Quantity Specification 1. 1000PCS/1Bag Notes 1.