Infineon IGBT Module 1.2kV 780W

Voltage-controlled. Simple parallel switching. High overload capacity. High switching frequencies. The actuation power and robustness correspond to the power MOSFET. Each IGBT has an anti-parallel diode. Some modules with built-in power rectifier and braking chopper (PIM) for mains voltages of 230 to 690 V and above.