Infineon IGBT Module 1.2kV 2.5kW
BSM300GA120DN2
Categories
Description
Voltage-controlled. Simple parallel switching. High overload capacity. High switching frequencies. The actuation power and robustness correspond to the power MOSFET. Each IGBT has an anti-parallel diode. Some modules with built-in power rectifier and braking chopper (PIM) for mains voltages of 230 to 690 V and above.
Manuals
# | Title | Languages | Pages | Updated |
---|---|---|---|---|
1 | Datasheet | EN | 11 | 2020-11-08 |