Ixys MOSFET N, 1000 V 24 A 600 W SOT-227B
IXFN24N100
Categories
Description
High-performance MOSFETs with fast reverse diodes. Designed for low dv/dt sensitivity during current commutation. No external free-wheeling diodes necessary for bridge configuration with an inductive load.
Manuals
| # | Title | Languages | Pages | Updated |
|---|---|---|---|---|
| 1 | Datasheet | EN | 5 | 2020-11-07 |