Manual

Document Number: 93174 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 04-Aug-08 7
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A
Vishay High Power Products
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
2.4
2.6
2.8
3
3.2
3.4
3.6
00101
Rate Of Fall Of Fo rwa rd Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD303C..S20C Series
T = 125 °C, V = 30V
J
r
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq ua re Pulse
FM
SD 3 03C ..S2 0C Se rie s
T = 1 2 5 ° C , V = 3 0 V
J
r
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a xim um R eve rse Rec o very C urrent - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq uare Pulse
FM
SD 303C ..S20C Serie s
T = 125 °C, V = 30V
J
r
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basewidth (µs)
Pea k Forward Current (A)
4
dv/d t = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD303C..S10C S eries
T = 125°C , V = 1120V
J
RR M
tp
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basewidth (µs)
4
20 jou les p er pulse
10
0.4
0.2
Tr apezo id al Pul se
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp